Investigation into free-space terahertz radiation from a LT-GaAs-on-quartz photoconductive emitter

We report on large-area photoconductive THz emitters and detectors with an LT-GaAs active region fabricated on quartz substrates using a lift-off transfer process. These devices are compared to the same LT-GaAs emitters when fabricated on the growth substrate. We find that the transferred devices show higher optical-to-THz conversion efficiencies and significantly larger breakdown fields.