Gate driver circuit for IGBT using reduced number of high frequency transformers

Insulated Gate Bipolar Transistor (IGBT) is an important semiconductor switch element present in static converters. IGBT controls circuits should ensure proper operation and guarantee electrical isolation from the power device to be protected against EMI caused by the switching transients of the high power. This paper presents the design of a driver using a single transformer for controlling two inverter arms, based on the high frequency modulation showing experimental tests.