Ridge-type InGaAs quantum wire field effect transistor with negative differential resistance

In this paper, we firstly report the negative differential resistance (NDR) characteristics in ridge-type InGaAs/InAlAs quantum wire field-effect transistor (QWIR-FET) with the /spl delta/-doped layer grown on InP [100] patterned substrate by molecular beam epitaxy. The drain voltage for the onset of NDR and peak-to-valley current ratio (PVCR) are significantly improved by employing QWIR and by decreasing the distance between a source and drain.