Analyses of structure design and I/sub ds/ nonlinear modeling for 5-watt multi-cell microwave GaAs MESFET

The characteristics are described for a GaAs MESFET with 5-watt large-gate-width multi-cell structure, including optimal structure design, processes and high breakdown voltage and overcurrent capacity. Also, we propose a modified I/sub ds/ nonlinear model, and the agreement with experiment using this typical model was better than the results given by directly employing the common models.