Failure analysis approach of gate source capacitance fault on IGBT and device physics theory

This paper describes the case study of test method of gate source failure and the fault localization approach with aid of device physics theory. The nominal behaviour of IGBT device is turn on the moment gate voltage reaches the threshold voltage. However, in this case the device turn on before the gate voltage reaches to the ideal threshold voltage due to distracted by Gate-source capacitance. On this failure analyse the gate source voltage are applied in a way localized the weak point gate source capacitance.