Application to thermal analysis using optical probe technique

We evaluate a method for localization of thermal source by using optical probing. A two-dimensional imaging of infrared radiation is commonly used as localization of thermal source. At the flow of failure analysis, thermal lock-in (LIT) method by InSb camera is used to detect a leakage and short point in a package and power device sample. However, an accuracy of localization is not enough due to the longer sensitive wavelength and the limitation of the reading speed of InSb camera. We introduced the technique of the optical probe and tried improvement of this accuracy. The optical probing utilizes the technique of the EO (Electro Optical) probe measurement that is in use by the dynamic analysis of the semiconductor device. This technique has higher spatial resolution and higher lock-in frequency than LIT. From the improving time resolution, we detect a precise thermal waveform.