Influences of sandwiched structure trench and temperature on the latch-up reliability of LIGBT on thick SOI substrate

In this paper, the influences of sandwiched structure trench on the latch-up reliability of the LIGBT with thick SOI substrate are investigated. Based on the influence mechanisms, a novel device structure with trench grounded is proposed, which can enhance the latch-up voltage by 24% with the other performance maintained. Further studies illustrate that the latch-up voltage would decrease dramatically under high temperature, indicating that the latch-up reliability of LIGBT should be evaluated under high temperature to ensure it operation safely in the practical condition.