High resolution short defect localization in advanced FinFET device using EBAC and EBIRCh

Defect localization of short failures has been a big challenge in modern advanced nanoscale devices. In recent years, Electron Beam Induced Resistance Change (EBIRCh) technique has been applied to failure analysis. The EBIRCh technique incorporated into SEM based nanoprobing system allows not only direct electrical characterization of suspicious bridge sites but also direct pinpointing of short defects with SEM resolution. In this paper, we directly measure electron beam induced current variations with nanoprober for comprehensive understanding of EBIRCh mechanisms. A failure analysis case study will be presented using EBAC and EBIRCh. In an advanced FinFET device, pinpointing of a single fln within 50 nm enabled direct TEM cross-sectioning for invisible defects in plane-view inspections.