High performance 500–750 GHz RF MEMS switch

In this work, a 500-750 GHz (WM-380) RF micro-electromechanical DC contact switch is realized and reported. This switch is integrated with a 50-Ω coplanar waveguide. The structure is fabricated on high resistivity silicon with top isolation silicon dioxide layer of 100 nm. The switch is electrostatically actuated with a threshold voltage of 60 V. The switch design and calibration are discussed. On-wafer measurements demonstrate that the insertion loss to be 0.7-2.7 dB in “ON” state with return loss greater than 12 dB. In the “OFF” state, isolation is better than 17 dB across the band.