Performance Improvement of p-Channel Tin Monoxide Transistors With a Solution-Processed Zirconium Oxide Gate Dielectric

This letter reports the fabrication of p-channel tin monoxide (SnO) thin-film transistors (TFTs) with a high-permittivityzirconium oxide (ZrO
₂
) gate insulatorfilm, which were prepared by a low-cost spin-cast method. The spincast ZrO
₂
dielectrics exhibit a low leakage current density of 4.5× 10
^-8
A/cm
²
at 1 MV/cm. Introducing the ZrO
₂
dielectric in top-type SnO TFTs allows for a reduction in the driving gate voltage range from 80 to 10 V, as compared with devices with a thermal SiO
₂
gate insulator. Additionally, a high field-effect mobility of 2.5 cm
²
/Vs and an ION/OFF of 3 × 10
³
were preserved.