Fabrication of two- and three-terminal nanogap structure by using electron beam lithography

A high-quality device of aligned gold nanogap arrays is demonstrated by using a well-controlled method with electron beam lithography (EBL). Sub-30 nm nanogap arrays could be precisely fabricated with reproducibility. Importantly, the controllable method could allow us to readily construct varying nano-spacings and exhibit distinct FE properties. These studies clearly demonstrate that sub-30 nm vacuum channel can be readily achieved by coupling varying nanogaps into nanostructures or extended to additional functionalities, e.g. shape modification or multiple dimensional materials. It may pave the way for exploring the physics in tunneling transport devices, and therefore enable a new generation of high performance, high speed and low cost electronic devices.