The topical issues on the advancement and reliability of novel microelectronic devices

This paper presents the topical researches on novel microelectric devices in recent years. With the nanometerization of microelectric devices, new materials such as GaN, SiC, and new structures such as MEMS, SOI, SIP, have been adopted widely. We focus on their reliability studies, and then propose the methodology and suggestions on reliability studies of novel microelectronic devices.