Comments on “A General and Transformable Model Platform for Emerging Multi-Gate MOSFETs”

Hong et al. [1] presented an analytical solution for the electrostatic potential in undoped cylindrical MOSFETs, which was then employed within a well-known Pao-Sah integral to yield the device current. This same analytical solution and drain current calculation were presented in 2016 [2], but such work was not referenced by Hong et al. [1].