A differential W-band amplifier in 130 nm SiGe BiCMOS process

A differential 104 GHz amplifier has been demonstrated in 130 nm SiGe BiCMOS process. The amplifier features a 3-stage differential cascode architecture with on chip interstage matching. The amplifier's stability is improved by using transmission line inductor in the cascode structure. With stacking circuit architecture, the amplifier could tolerate up to 3 V supply voltage without reliability concern. From the on-wafer measurement results, the amplifier shows a peak gain of 17 dB at 104 GHz with the 3-dB bandwidth of 15 GHz. It also delivers 6.1 dBm saturated output power under 3V supply. The chip draws the current of 70mA.