Design of a 28-GHz low noise amplifier using 0.15-um InGaAs pHEMT E-mode technology

We present a 28-GHz low-noise amplifier (LNA) using 0.15-um InGaAs pHEMT enhancement-mode (E-mode) technology. The 28-GHz LNA exhibits a gain of 22.2 dB and a 3-dB bandwidth of 14.1 GHz (22.7-36.8 GHz) under 3-V supply with 38.5-mA current consumption. The simulation results of the LNA show a noise figure (NF) of 2.13 dB and a P1dB of 10.8 dBm. The chip size is 1488 um × 796 um.