High Efficiency Operation of GaInAsP/InP Membrane Distributed-Reflector Laser on Si

Record high power conversion efficiency operation of a GaInAsP/InP membrane distributed-reflector laser on silicon substrate was realized. In order to enhance the efficiency, both an improvement of external differential quantum efficiency and a reduction of differential resistance were achieved. As a result, an external differential quantum efficiency from the front facet of 36%, and a maximum power conversion efficiency of 14.6% were obtained for a device with a 40-$\mu \text{m}$ -long active region.