Controlled Kink Effect in a Novel High-Voltage LDMOS Transistor by Creating Local Minimum in Energy Band Diagram

A new technique to control the kink effect in the high-voltage lateral double-diffused MOSFET (LDMOS) is presented in this paper. This technique produces a local minimum in the band diagram of the proposed structure, which causes the lower barrier height for the holes from the channel to the source region. So, the produced excess holes during the impact ionization process in the channel are reduced significantly. We have called the proposed structure as local minimum energy band LDMOS (LMEBLDMOS) transistor. The LMEB-LDMOS structure contains modified source and drain regions. The modified source region creates a local minimum in the energy band diagram for absorbing the excess holes, and the modified drain region causes high breakdown voltage (462 V) and low specific on-resistance (5.1 mΩ · cm
²
). Also, the drift region with lower doping density than drain is deleted in LMEBLDMOS transistor. The simulation with 2-D ATLAS simulator shows that the proposed structure improves the device performance.