Multi-gigahertz picosecond pulse generation by passive mode-locking of monolithic two-section quantum well semiconductor lasers emitting at 1070 nm: Study of different laser lengths and gain-to-absorber section length ratios

Monolithic two-section quantum well semiconductor lasers are promising sources for the generation of short pulses in the single-digit picosecond range by passive mode-locking and at high pulse repetition frequencies exceeding 40 GHz. Laser emission at around 1070 nm makes them ideal candidates for potential light amplification in Ytterbium doped fiber amplifiers and application in data transmission experiments. In both, a precise knowledge of the pulse train stability, quantified by timing-jitter and amplitude jitter, is crucial. We experimentally investigate lasers with different cavity lengths and gain-to-absorber section length ratios. For a large variety of biasing parameters, the pulse generation performance and pulse train stability is quantified.