Reduction of the temperature sensitivity of anodic bonded resonant pressure micro sensors

This paper presents an approach to reduce the temperature sensitivity of an anodic bonded resonant pressure micro sensor by attaching a quartz wafer to the backside of the sensor. The quartz wafer with a negligible expansion coefficient can effectively reduce the residual thermal stress in the sensor chip caused by anodic bonding. The silicon-quartz bonding based on hydroxide catalysis was proposed, fabricated and characterized. Experimental results showed an effective reduction in the drifts of device resonant frequencies from ~ 1700 Hz to ~ 550 Hz within the temperature range of -40~80 °C under the external pressure of 110 kPa.