Memristor device characterization by scanning microwave microscopy

We report memristive device characterization using near-field scanning microwave microscopy. Atomic force microscopy, magnitude and phase-shift images of the complex reflection coefficient of TiO2 devices can be acquired simultaneously in the range 1-20 GHz. In particular, measurement of the complex reflection coefficient of a 200 by 200 nm2 TiO2 device is exemplary demonstrated. These results are beneficial for electrical modeling and optimization of memristor devices to address OxRAM applications.