High-Performance of Al Nanoparticle Enhanced 4H-SiC MSM Photodiodes for Deep Ultraviolet Detection

The size controlled Al nanoparticles (NPs) were prepared by magnetron sputtering and subsequent rapid thermal annealing. Significant deep ultraviolet (DUV) detection enhancement is demonstrated on 4H-SiC metal-semiconductor-metal (MSM) ultraviolet photodiodes (PDs) by introducing the coupling of localized surface plasmon resonance (LSPR) from Al NPs. The peak responsivity of 165 mA/W and quantum efficiency of 93% at 220-nm wavelength are achieved under deuterium lamp illumination when 10-V bias is applied, which is 3.93 times than that without Al NPs. LSPR at wavelength as low as 220 nm is the shortest one ever reported in Al NPs.