A wideband highly efficient class-J integrated power amplifier for 5G applications

Next generation mobile systems are expanding their spectrum to millimeter wave frequency bands to support data rates up to multigigabits per second. The power amplifier is a critical element of the radiofrequency front-end in terms of power consumption and bandwidth. In this work, we present the design of a fully integrated wideband high efficiency class-J power amplifier. Post-layout simulation results show a broadband behavior of the amplifier over 12 GHz of bandwidth with a saturated power of 16.3 dBm and a peak power added efficiency of 39 % at 28 GHz. In addition, the linearity of the amplifier is reconfigurable thanks to the back-gate of the 28nm CMOS FD-SOI technology.