Carrier transport in the multi quantum well region of III-nitride light emitting diodes

The carrier transport in the multi quantum well (MQW) region of Ill-nitride light emitting diodes is critical for their efficiency in the high current regime. The asymmetry of the electron and hole transport makes it difficult to achieve an equal distribution of the quantum well luminescence in order to decrease the droop. To study the luminescence distribution we have devised a carrier transport model accounting for the carrier quantization effects in an MQW active region. The detailed study of the carrier distribution in the MQW is supported by an equivalent circuit model. By means of this model we demonstrate that the re-distribution of the luminescence in the MQW with increasing bias current has an effect on the ideality factor.