Self-sensing cantilevers with nano-laminated Dielectric-Metal-Dielectric resistors

Results obtained at integration of nano-laminated Dielectric-Metal-Dielectric (DMD) resistors in silicon MEMS sensors are presented in this paper. Fabrication technology with significantly reduced thermal budged for integration of DMD resistors in four-cantilever device has been developed. The ultrathin layers have been deposited in a consecutive RF sputtering process, without exposure to air, exploiting a lift-off patterning technique. The results proved that: i) very good stability of the DMD resistors was achieved, and ii) strain-sensing behavior of nano-laminated structures has been demonstrated.