Dynamic Stress Measurements of Electronic Devices during Active Operation

In this work an investigation on dynamic stress development during switching operation of power electronic devices is presented. Two measurement techniques were used to analyze the behavior of devices which were mounted with electrically conductive adhesives. A self-heated silicon test chip with CrNi-thin film strain gauge structures was developed. The heating function enables simulation of thermal operating conditions and comparison of passive and active heating. Digital Image Correlation was used as a contactless technique for reference measurements in active operation. The out-of-plane deformation of assembled IBGTs on Al
₂
O
₃
-DCB substrates was measured. Both methods were used for time-resolved measurements of the stress development.