Corrugated channel In0.8Ga0.2As quantum well transistors for low power logic applications

In
x
Ga
1−x
As MOSFETs with superior carrier transport properties promise to deliver high current at reduced supply voltages [1-2]. Strained III-V quantum well FinFETs (QW-FF) have been investigated [3-4] as feasible pathways to low power logic. For sub-7 nm nodes, challenges in maintaining electrostatic integrity in FFs has led to the proposal of faceting the FF channel (corrugated channel) to produce diamond-shaped [7-8] electrically gate-all-around (eGAA) channels. In this work, we evaluate the impact of corrugating of channel width (Z
eff
) in In
0.8
Ga
0.2
As QW transistors on effective drive current (I
eff
) gain and short channel effect (SCE) improvement for 7nm node.