Gate structure engineering for enhancement-mode AlGaN/GaN MOSHEMT

The E-mode AlGaN/GaN MOSHEMTs fabricated by the gate recess, the fluorine doped AlGaN, and the in-situ chlorine doped Al2O3 are demonstrated. The present MOSHEMT has VT of 4.5 V, IDS,max of 0.32 A/mm, BVoff of 655 V, and Ron,sp of 1.67 mΩ-cm2. With insignificant current collapse and slightly higher IGD, the present MOSHEMT show its potential in power electronic applications.