Contact engineering of monolayer CVD MOS2 transistors

We demonstrated significant reduction of the contact resistance (to -480Ω.μm) for tope-gated monolayer CVD MoS2 through a combination of work function engineering and effective n-type doping by HfOX. In addition to improving the contact resistance, our approach maintains the mobility (-64cm2/V.s.), 10N110FF ratio (>106), and subthreshold swing (425mV/dec) of these transistors.