Ultralow ON-resistance high-voltage vertical HEMT with an accumulation effect trench gate

An ultralow specific ON-resistance (RON,sp) high voltage vertical HEMT (V-HEMT) is proposed. It features an extended trench gate with accumulation effect (ATG). In the ON-state, the ATG induces the electrons accumulation layer along the sidewall of the ATG, providing an ultralow-resistance current path and contributing to a much lower RON, sp. In the OFF-state, the ATG as a Field Plate (FP) introduces a new electric field (E-field) peak at the end of the ATG and modulates the E-field distributions to enhance the breakdown voltage (BV). Therefore, the ATG V-HEMT decreases RON,sp by 56% and increases the BV by 216% compared with the conventional V-HEMT (Con V-HEMT).