Investigation the impact of composition on the performance of SiGe nanowire pMOSFETs by different simulation methods

In this work, the SiGe nanowire pMOSFETs (NWT) for 7nm and beyond with Ge component varies from 20% to 90% are simulated by different methods including drift-diffusion (DD) vs Monte Carlo (MC) method for transport, and the Poisson-Schrödinger solver(PS) vs the density gradient (DG) approach for quantum effect. The impact of Ge component variation on the performance of pMOSFETs is also evaluated.