Simulation method for forming and switching processes of NbO2-based selector

NbO2-based selector with threshold switching characteristics was studied as a probable candidate to address the sneak-path problem in the resistive-switching random access memory(RRAM) arrays. In this work, we simulate the forming and switching process of the selector with consideration of the thermally driven metal-insulator transition and crystallization effects. Based on the simulator, we analyze the influence and optimization of the working conditions and device dimensions on the device characteristics.