Statistical analysis on performance degradation of 90 nm bulk Si MOS devices irradiated by heavy ions

In this paper, the radiation response of 90nm bulk Si MOS devices irradiated by heavy ions is experimentally studied. Due to the intrinsic random incident of heavy ions, different performance degradation is observed, such as threshold voltage shift, saturation current change and maximum transconductance degradation. These performance degradations may be attributed to the displacement damage in channel region, interface states at gate oxide interface and trapped charges in STI, which are generated by heavy ion irradiation. Furthermore, the statistical analysis on the performance degradation of 90nm bulk Si MOS devices is also demonstrated firstly. The results indicate that the performance variation of 90nm bulk Si MOS devices enlarges after heavy ion irradiation compared with un-irradiated devices. Besides, the standard variation of threshold voltage shift, DIBL shift and off-state leakage current degradation induced by heavy ion irradiation increases with the decrease of gate width, which should be paid more attention. The results may provide guideline for radiation-hardened design.