Simulation of direct tunneling through stacked gate dielectrics by a fully integrated 1D-Schrodinger-Poisson solver

We compare the numerical results for electron tunneling currents for single gate oxides, ON- and ONO-structures. We demonstrate that stacked dielectrics can keep the tunneling currents a few orders of magnitude lower than electrostatically equivalent single oxides. We also discuss the impact of gate material and the modeling of electron transport in silicon.