High Power Density GaN Interleaved Bidirectional Boost Converter with Extended Cooling Capability

In this paper the design of a four phase interleaved switched bidirectional boost converter (IBC) with enhancement mode gallium nitride (GaN) HEMTs (e-HEMT) is described. The benefits of GaN technology are used to build a converter with very high power density. The selection of the switching frequency and the design of planar inductors are presented as the results of a power density constrained optimization process. To improve the heat dissipation of the e-HEMTs a novel cooling system has been integrated and its performance is systematically investigated. Finally, the efficiency of the converter is analyzed and compared at different input voltages and output power levels.