Investigation of GaN-HEMTs in Reverse Conduction

This work investigates the reverse conduction characteristics of 600 V-class GaN-HEMTs. The behavior of a conventional HEMT is analyzed and compared to the reverse conduction of an improved HEMT structure with integrated freewheeling diode. The characteristics of both structures are measured on fabricated test samples. Furthermore, the electrical behavior is analyzed with regards to the intrinsic layouts.