Lifetime Estimation Model of HVIGBT Considering Humidity

This paper describes the lifetime estimation model of HVIGBT (High Voltage Insulated Gate Bipolar Transistor) considering humidity. The proposed lifetime estimation model includes humidity acceleration factor derived from THB (Temperature Humidity Bias) tests. The THB tests of HVIGBTs were performed at different humidity and voltage conditions to find the acceleration factors for each parameter. Finally, we estimated the lifetime of HVIGBT with combination of those two parameters in addition to temperature parameter by our new lifetime estimation model. We also found out that humidity has a big impact on HVIGBT lifetime.