The Next Generation High Power Modules with Enhanced Trench BIGT Technology

The Enhanced Trench ET-BIGT combines the advantages of both a low loss ET-IGBT MOS cell design and a BIGT (IGBT/diode integration) structure. The outcome of this combination yields a high voltage IGBT-based device with potentially the highest reachable power density possible to date. This will set new milestones for reaching higher output current ratings in existing (HiPak) and future (LinPak) standard modules. In this paper, an ET-BIGT device concept is demonstrated for a 3300 V class device at both chip and module levels. The paper will also provide an outlook for the expected performance levels gained with the new technology for future applications.