An Optimized Plug-In BIGT with No Requirements for Gate Control Adaptations

In this paper, we introduce a new version of the Bimode Insulated Gate Transistor (BIGT) optimized to provide low diode conduction losses without the need for gate control adaptations. The concept is based on design modifications at both the MOS cell level and emitter injection efficiency to provide a low VF even when a positive gate signal is applied on the BIGT during diode mode conduction. These steps provide a Plug-In option for high power BIGT modules into standard gate drive/control setups for existing and future applications. The paper will provide the design details and experimental demonstration at chip and module level for a 6500 V rated BIGT.