Plasma damage during dielectric etch in high density plasma etcher

Plasma process induced damage from a high density plasma dielectric etcher was studied comprehensively. PMOS devices are damaged more readily than NMOS devices. Low field gate current is the most sensitive parameter to reflect damage. Latent defects in the form of oxide-traps were observed after back-end-of-line processing. These latent defects result in poor gate oxide integrity under Fowler-Nordheim stress or hot carrier stress. Plasma damage during contact or via hole etch must therefore be considered carefully.