On trap identification in triple-gate FinFETs and Gate-All-Around nanowire MOSFETs using low frequency noise spectroscopy

This paper brings a comparison of the traps identified in triple-gate FinFETS and Gate-All-Around (GAA) nanowire (NW) MOSFETs built with the same technological process. Traps have been identified using low frequency noise (LFN) spectroscopy, giving information on which process steps may be improved in order to build better devices.