Abstract:
In this paper, a trans-impedance amplifier (TIA) for 10Gbps applications in 90nm CMOS technology is proposed. The proposed TIA is combination of a regulated-cascode (RGC)...Show MoreMetadata
Abstract:
In this paper, a trans-impedance amplifier (TIA) for 10Gbps applications in 90nm CMOS technology is proposed. The proposed TIA is combination of a regulated-cascode (RGC) and a wide-swing cascode (WSC) structure. The focus in this work is to design a full-transistor structure which can operate at a low-supply voltage and high speed applications. Simulation results using 90nm CMOS technology parameters in HSPICE shows 48dBΩ trans-impedance gain, 7GHz bandwidth, 10mW power consumption for 0.8 supply voltage and 2.1μArms (or 25.1pA/√Hz) input referred noise.
Published in: 2017 Iranian Conference on Electrical Engineering (ICEE)
Date of Conference: 02-04 May 2017
Date Added to IEEE Xplore: 20 July 2017
ISBN Information: