InSb/GaAs quantum dot solar cell

Our work focuses on the simulation and optimization of InSb/GaAs quantum dot solar cell. We have studied the effects of different parameters of the quantum dot such as the number of layers, the thickness and their influence on the solar cell characteristic (Current-Voltage, and the External Quantum Efficiency EQE). Moreover, we have studied the Photoluminescence PL spectra in order to characterize the optical properties of InSb/GaAs QDSC. It has been shown that with 30 layers of InSb/GaAsQDs, a relative enhancement around 22.33 % of the short-circuit current and 29.31 % of the efficiency are achieved, the absorption range edge of photons with low energy extended from 900 to 1400 nm. This reveals that the introduction of QDs in the intrinsic region of GaAs p-i-n structures has significantly improved the device characteristics beyond a conventional semiconductor-based solar cells. On the other hand, we found that thicker QDs provides additional enhancement of the solar cell performance.