Fabrication of periodic Si nanocages by lithographic anodization

It has been shown that periodic Si nanostructures with nanometer-scale pores can be formed by controlled anodization of heavily doped n-type Si wafer. We have also studied a nanofabrication process by dual-functional refractory metal oxide (MoO/sub 3/ and WO/sub 3/) resists for a Ga/sup +/-focused ion beam (FIB) exposure. In this paper, we demonstrate that controllability of periodic Si nanostructures formation can be enhanced by appropriate combination of the above two techniques.