A analytical study of depth profiling for MeV implants by using Monte Carlo and Taurus models

Simulation tools are very important to develop process and design a new device structures. Device characteristics and physics phenomena also can be analyzed and predicted using this tools. High energy implantation of dopant atoms is used to form buried layers of high conductivity in silicon. These layers have many potential applications. In order to make optimum use of very high energy dopant implants, the depth and profile shape characteristics of these implants need to be simulated and calibrated. The present investigation explores MeV phosphorus implants into silicon through an oxide. This paper presents the results of depth profiling for MeV implantation, different doses and different tilt angles by using Taurus analytical model and Monte Carlo ion implantation model. Monte Carlo ion implantation can give good profile prediction without calibration compared to Taurus analytical model.