C-shape silicon window nano MOSFET for reducing the short channel effects

This paper introduces a novel reduced short channel effects in nanoscale SOI MOSFETs by C-shape silicon window inside the channel, source and buried oxide. This work investigates the main characterizations such as maximum lattice temperature, subthreshold swing, DIBL, threshold voltage roll-off which all of them show the superiority of the proposed structure compared to the conventional SOI MOSFET (C-MOSFET) in case of reliable low-voltage applications. All the achieved numerical results have been extracted by two-dimensional simulator ATLAS.