Cantilever and circular disc structure based capacitive shunt RF MEMS switches

This paper mainly discuss the aspects in the design and simulation of rectangular cantilever and circular disk micro strip transmission line based capacitive RF MEMS switches. In both the designs the structure is placed on a silicon dioxide (SiO2) dielectric material with dielectric constant of 4.5 and the thickness of 1μm. Here an analysis is done by taking different metals (Al, Au, Cr, Cu, Pd, PT, Ti, W) of thickness 1μm as structural material and observed the deformation, capacitance variations, and switching time. It is good for aluminum metal as a Micro-strip material. And compared to circular disk structure, rectangular cantilever is giving good performance of better displacement of 0.9μm and capacitance variation of 0pF-5.5pF for the actuation voltage of 2.55 V. This paper extended the analysis by extracting the lumped circuit for the microstip transmission line based RF MEMS Switch, after doing the lumped analysis, it is proved that aluminum based cantilever structure exhibiting negligible losses of 0.1dB.