A Tunnel Dielectric-Based Junctionless Transistor With Reduced Parasitic BJT Action

In this paper, we demonstrate a tunnel dielectric-based junctionless transistor, referred as TD JLT, which consists of a thin dielectric layer in the middle of the channel region of a JLT leading to a drastically reduced parasitic bipolar junction transistor (BJT) action. Using calibrated 2-D simulations, we show that the proposed TD JLT has a significantly low off-state leakage current due to the presence of a tunneling barrier, and an enhanced source-to-channel barrier height, which results in a diminished parasitic BJT action in the off-state. Further, the proposed TD JLT exhibits an extremely high I
_ON
/I
_OFF
ratio of ~1.1×10
⁷
for a channel length of 20 nm and a significant(I
_ON
/I
_OFF
) ratio of ~10
²
even for a channel length of 10 nm.