Electroluminescence characteristics of rare earth doped silicon based light emitting device

Electroluminescence (EL) of MOS devices with rare earth related oxide layer, which were fabricated with the mixtures of organic liquid sources of Tb and (Tb+Eu) spin-coated on the Si substrate and annealed, are reported. Visible green and red EL were observed. The spectral peaks of the EL correspond to radiative transitions of Tb³⁺ and Eu³⁺ ions. Effects of compounding ratios of (Tb+Eu) devices on EL characteristics are analyzed.