3D time-contingent physical unclonable function array on 16nm FinFET dielectric RRAM

The randomness and unpredictability of Random Telegraph Noise (RTN) of 16nm FinFET Dielectric (FIND) RRAM is firstly implemented to Time-Contingent Physical Unclonable Function (PUF) application. A novel 3D Time-Contingent Physical Unclonable Function (TC-PUF) realized by 1Kbit 16nm FinFET Dielectric (FIND) RRAM has been newly proposed and demonstrated on a pure 16nm FinFET CMOS logic technology. The new TC-PUF RRAM shows wide operation ranges of voltages and temperatures, and Randomness test confirms the feasibility and stability of the TC-PUF RRAM in the frequency, unpredictability, and long-run continuity.