III-V/Si low temperature direct bonding technology for photonic device integration on SOI

Low temperature wafer scale direct bonding technology using plasma activated bonding (PAB) for heterogeneous photonic device integration is reviewed. Nitrogen plasma irradiation in a high vacuum chamber allows tight strength bonding between InP-based and SOI wafers with the bonding temperature of 150°C as well as low damage to GaInAsP quantum wells (QWs). In contrast Argon irradiation cause poor bonding strength for InP. Using this technology, lasing operations of 1.55-μm GalnAsP/SOI hybrid lasers were demonstrated.